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| SMD Type Transistors Silicon NPN Triple Diffusion Planar Type 2SD1249, 2SD1249A TO-252 +0.15 1.50 -0.15 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features +0.2 9.70 -0.2 +0.15 0.50 -0.15 +0.1 0.80-0.1 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 High collector-base voltage (Emitter open) VCBO 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) 2SD1249 2SD1249A 2SD1249 2SD1249A VEBO IC ICP PC Ta = 25 Junction temperature Storage temperature Tj Tstg VCEO Symbol VCBO Rating 350 400 250 300 5 0.75 1.5 35 1.3 150 -55 to +150 Unit V V V V V A A W Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation 3.80 www.kexin.com.cn 1 SMD Type 2SD1249, 2SD1249A Electrical Characteristics Ta = 25 Parameter Collector-emitter voltage (Base open) Collector-emitter cutoff current (E-B short) Collector-emitter cutoff current (Base open) 2SD1249 2SD1249A 2SD1249 2SD1249A 2SD1249 2SD1249A IEBO hFE VBE VCE(sat) fT ton tstg tf ICEO ICES VCE = 350 V,VBE = 0 VCE = 400 V,VBE = 0 VCE = 150 V,IB = 0 VCE = 200 V,IB = 0 VEB = 5 V,IC = 0 VCE = 10 V, IC = 0.3 A VCE = 10 V, IC = 1 A Base-emitter voltage Collector-emitter saturation voltage Transition frequency Turn-on time Strage time Fall time VCE = 10 V,IC = 1 A IC = 1 A, IB = 0.2 A VCE = 10 V, IC = 0.2 A, f = 10 MHz IC = 1 A IB1 = 0.1 A, IB2 = ? 0.1 A VCC = 50 V Symbol VCEO Testconditons IC = 30 mA, IB = 0 Transistors Min 250 300 Typ Max Unit V V 1 1 1 1 1 40 10 1.5 1.0 30 0.5 2.0 0.5 250 mA mA mA mA mA Emitter-base cutoff current (Collector open) Forward current transfer ratio V V MHz is is is hFE Classification Rank hFE R 40 to 90 Q 70 to 150 P 120 to 250 2 www.kexin.com.cn |
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